super fast recovery diode rf081m2s ? series ? dimensions (unit : mm) standard fast recovery ? applications general rectification ? features 1)small power mold type. (pmdu) ? structure 2)high switching speed 3)low reverse current ? construction silicon epitaxial planar ? taping dimensions (unit : mm) ? absolute maximum ratings (tl=25c) symbol unit v rm v v r v direct voltage glass epoxy substrate mounted 5050mm glass epoxy substrate mounted i fsm a tj c tstg c ? electrical characteristics (tj=25c) symbol min. typ. max. unit 0.83 0.95 i f =0.8a 0.86 0.98 i f =1.0a reverse current i r 0.01 10 a v r =200v reverse recovery time trr 12 25 ns i f =0.5a,i r =1a,irr=0.25*ir thermal resistance rth(j-l) 20 c/w junction to lead forward voltage v f v conditions storage temperature ? 55 to ? 150 parameter forward current surge peak 15 60hz half sin wave, non-repetitive one cycle peak value, tj=25c junction temperature 150 average rectified forward current io 0.8 a 1.0 repetitive peak reverse voltage 200 reverse voltage 200 ? land size figure (unit : mm) parameter limits conditions pmdu 1.2 3.05 0.85 rohm : pmdu jedec :sod-123 manufacture date 0.90.1 1.60.1 2.60.1 3.50.2 0.80.1 0.10.1 0.05 4.00.1 2.00.05 1.550.05 1.810.1 4.00.1 1.00.1 3.50.05 1.750.1 8.00.2 0.250.05 1.5max 3.710.1 1/3 2011.05 data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rf081m2s ? electrical characteristics curves 0 5 10 15 20 25 30 ave:12.2ns tj=25 if=0.5a ir=1a irr=0.25*ir n=10pcs 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) mounted on epoxy board 1ms im=10ma if=0.5a 300us time 1 10 100 1000 110100 0 20 40 60 80 100 1 10 100 700 750 800 850 900 1 10 100 0 5 10 15 20 25 30 0.01 0.1 1 10 200 400 600 800 1000 1200 forward voltage vf(mv) vf-if characteristics forward current:if(a) reverse current:ir(na) reverse voltage vr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(na) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth ( /w) trr dispersion map reverse recovery time:trr(ns) f=1mhz tj=25 vr=200v n=20pcs ave:10.8na ave:818mv tj=25 if=1.0a n=20pcs electrostatic discharge test esd(kv) esd dispersion map 0 5 10 15 20 25 30 no break at 30kv c=100pf r=1.5k ? c=200pf r=0 ? ave:13.6kv 1 10 100 1000 110100 t ifsm tj=125 tj=25 tj=150 1 10 100 1000 10000 0 50 100 150 200 tj=125 tj=25 tj=150 40 45 50 55 60 tj=25 f=1mhz vr=0v n=10pcs ave:51.5pf ave:69.5a 8.3ms ifsm 1cyc 8.3ms ifsm dispersion map 2/3 2011.05 www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rf081m2s forward power dissipation:pf(w) average rectified forward current io(a) io-pf characteristics ambient temperature:ta( ) derating curve ? (io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc( ) derating curve(io-tc) 0 0.2 0.4 0.6 0.8 1 00.511.52 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 0 0.5 1 1.5 2 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 t tj=150 d=t/t t vr io vr=1 0v 0a 0v 0 0.5 1 1.5 2 0 306090120150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 t tj=150 d=t/t t vr io vr=160v 0a 0v 3/3 2011.05 www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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